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MICROWAVE CORPORATION
v00.0703
HMC377QS16G
CELLULAR HIGH IP3 RFIC DOWNCONVERTER, 0.8 - 1.0 GHz
Features
+15 dBm Input IP3, +29 dBm Output IP3 Low LO Drive: -5 dBm LO Conversion Gain: 14 dB Noise Figure: 11 dB Positive Supply: +5V @ 135 mA
Typical Applications
The HMC377QS16G is ideal for:
* GSM & CDMA Infrastructure * GPRS & EDGE Infrastructure * Wireless Data/CDPD
Functional Diagram
General Description
The HMC377QS16G is a linear downconverter receiver IC suitiable for cellular infrastructure applications from 0.8 - 1.0 GHz. An integrated mixer coupled with a high dynamic range IF amplifier achieves an input intercept point (IP3) of +15 dBm, and an input P1dB of +3.5 dBm. The converter provides a gain of 13.5 dB and only 11 dB typical single side band noise figure. The IC operates from a positive +5V rail consuming 135 mA of current while requiring only -5 dBm LO drive. The design requires no external baluns. The mixer supports IF frequencies between 50 MHz and 250 MHz.
12
MIXERS - SMT
Electrical Specifications, TA = +25 C, LO = -5 dBm, IF = 70 MHz, Vdd = 5V
Parameter Frequency Range, RF & LO Frequency Range, IF * Conversion Gain Noise Figure (SSB) LO to RF Isolation LO to IF Isolation RF to IF Isolation IP3 (Input) 1 dB Compression (Input) LO Input Drive Level (Typical) Supply Current (Idd for IF + LO) 23 63 83 12 +0.5 11 Min. Typ. 0.8 - 1.0 50 - 250 14 11 28 70 - 75 90 - 95 15 +3.5 -10 to 0 135 Max. GHz MHz dB dB dB dB dB dBm dBm dBm mA
* IF matching must be tuned for optimal results. See application circuit herein. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
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MICROWAVE CORPORATION
v00.0703
HMC377QS16G
CELLULAR HIGH IP3 RFIC DOWNCONVERTER, 0.8 - 1.0 GHz
Conversion Gain vs. Temperature @ LO= -5 dBm
18 17 CONVERSION GAIN (dB) 16
Isolation @ LO= -5 dBm
0 -10 -20 ISOLATION (dB) -30 -40 -50 -60 -70 -80 -90 -100
RF TO IF LO TO RF LO TO IF
15 14 13 12 11 10 9 8 0.6 0.7 0.8 0.9 1 RF FREQUENCY (GHz) 1.1 1.2
+ 25C + 85C - 40C
0.6
0.7
0.8 0.9 1 FREQUENCY (GHz)
1.1
1.2
12
MIXERS - SMT
Conversion Gain vs. LO Drive
18 17 CONVERSION GAIN (dB) 16 15 14 13 12 11 10 9 8 0.6 0.7 0.8 0.9 1 RF FREQUENCY (GHz) 1.1 1.2
LO = -10dBm LO = -8dBm LO = -5dBm LO = -3dBm LO = 0dBm
Return Loss @ LO= -5 dBm
0
RETURN LOSS (dB)
-5
-10
-15
RF LO
-20 0.6
0.7
0.8
0.9
1
1.1
1.2
FREQUENCY (GHz)
Conversion Gain vs. Vdd @ LO= -5 dBm
18 17 CONVERSION GAIN (dB) 16 15 14 13 12 11 10 9 8 0.6 0.7 0.8 0.9 1 RF FREQUENCY (GHz) 1.1 1.2
+4.5V +5.0V +5.5V
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
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MICROWAVE CORPORATION
v00.0703
HMC377QS16G
CELLULAR HIGH IP3 RFIC DOWNCONVERTER, 0.8 - 1.0 GHz
Input P1dB vs. Temperature @ LO= -5 dBm
10
+ 25C + 85C - 40C
Input P1dB vs. Vdd @ LO= -5 dBm
10
+4.5V +5.0V +5.5V
8 INPUT P1dB (dBm)
8 INPUT P1dB (dBm) 1.1 1.2
6
6
4
4
2
2
0
0 0.8 0.9 1 RF FREQUENCY (GHz) 0.7 0.8 0.9 1 RF FREQUENCY (GHz) 1.1 1.2
12
MIXERS - SMT
0.7
Input and Output IP3 vs. Temperature @ LO= -5 dBm
50
INPUT, + 25C OUTPUT, + 25C INPUT, + 85C OUTPUT, + 85C INPUT, - 40C OUTPUT, - 40C
Input and Output IP3 vs. LO Drive
50
INPUT, LO = -8 dBm OUTPUT, LO = -8 dBm INPUT, LO = -5 dBm OUTPUT, LO = -5 dBm INPUT, LO = -2 dBm OUTPUT, LO = -2 dBm
40
40
IP3 (dBm)
30
IP3 (dBm) 0.8 0.9 1 RF FREQUENCY (GHz) 1.1 1.2
30
20
20
10
10
0 0.7
0 0.7 0.8 0.9 1 RF FREQUENCY (GHz) 1.1 1.2
Input and Output IP3 vs. Vdd @ LO= -5 dBm
50
INPUT, Vdd = +4.5V OUTPUT, Vdd = +4.5V INPUT, Vdd = +5.0V OUTPUT, Vdd = +5.0V INPUT, Vdd = +5.5V OUTPUT, Vdd = +5.5V
40
IP3 (dBm)
30
20
10
0 0.7 0.8 0.9 1 RF FREQUENCY (GHz) 1.1 1.2
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
MICROWAVE CORPORATION
v00.0703
HMC377QS16G
CELLULAR HIGH IP3 RFIC DOWNCONVERTER, 0.8 - 1.0 GHz
Noise Figure vs. Temperature, Swept LO, Fixed IF= 70 MHz
15 14 13 NOISE FIGURE (dB) 12 11 10 9 8 7 6 5 0.7 0.8 0.9 RF FREQUENCY (GHz) 1
+25 C +85 C -40 C
Noise Figure Swept IF, Fixed LO
15 14 13 NOISE FIGURE (dB) 12 11 10 9 8 7 6 5
1.1
LO = 600 MHz LO = 700 MHz LO = 750 MHz LO = 800 MHz
50
100
150 200 IF FREQUENCY (MHz)
250
12
MIXERS - SMT
IF Return Loss @ Various Tuned IF Frequencies
0
IF Bandwidth @ Various Tuned IF Frequencies
20 IF CONVERSION GAIN (dB)
-5 RETURN LOSS (dB)
15
-10
10
-15
5
-20
70 MHz 120 MHz 170 MHz 247 MHz
70 MHz 120 MHz 170 MHz 247 MHz
-25 50 75 100 125 150 175 200 IF FREQUENCY (MHz) 225 250
0 50 75 100 125 150 175 200 225 250 IF FREQUENCY (MHz)
MxN Spurious @ IF Port
nLO mRF 0 1 2 3 4 0 xx 94 95 95 94 1 79 0 95 95 94 2 95 95 44 95 94 3 93 95 95 84 95 4 94 95 95 95 94
Harmonics of LO
nLO Spur @ RF Port LO Freq. (GHz) 0.7 0.75 0.8 0.85 0.9 0.95 1 22 26 28 29 29 29 2 9 11 13 15 16 17 3 34 31 32 32 33 34 4 26 30 33 36 49 45
RF Freq.= 0.9 GHz @ -10 dBm LO Freq.= 0.83 GHz @ -5 dBm All values in dBc relative to the IF power level.
LO= -5 dBm Values in dBc below input LO level measured at RF port.
* Refer to HMC420QS16 Application Circuit herein for IF port tuning information. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
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MICROWAVE CORPORATION
v00.0703
HMC377QS16G
CELLULAR HIGH IP3 RFIC DOWNCONVERTER, 0.8 - 1.0 GHz
Absolute Maximum Ratings
RF / IF Input (Vdd= +5V) LO Drive (Vdd= +5V) Vdd (LO or IF) Channel Temperature Continuous Pdiss (T = 85C) (derate 17.4 mW/C above 85C) Thermal Resistance (RTH) (junction to lead) Storage Temperature +13 dBm +15 dBm +7 Vdc 150C 0.881 W
Typical Supply Current vs. Vdd
Vdd (Vdc) (LO & IF) 4.5 5.0 5.5 Idd (mA) 115 135 155
Downconverter will operate over above supply range.
57.3 C/W -65 to +150 C -40 to +85 deg C
12
MIXERS - SMT
Operating Temperature
Outline Drawing
NOTES: 1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEADFRAME MATERIAL: COPPER ALLOY 3. LEADFRAME PLATING: Sn/Pb SOLDER 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
MICROWAVE CORPORATION
v00.0703
HMC377QS16G
CELLULAR HIGH IP3 RFIC DOWNCONVERTER, 0.8 - 1.0 GHz
Pin Descriptions
Pin Number 1, 4, 7, 9, 14, 16 Function N/C Description No Connection. These pins may be connected to RF ground. Performance will not be affected. Interface Schematic
2
LO Port
This pin is DC coupled and matched to 50 Ohms from 0.8 - 1.0 GHz. An external series capacitor (100 pF) (C9) is required.
3
Vdd LO 1
Power Supply for the LO amplifier, An external 56 nH series inductor (L3) with 22 Ohm series bias resistor (R2) and an RF bypass capacitor (C8) are required.
12
MIXERS - SMT
12 - 185
5
Vdd LO 2
Power supply for the LO amplifier. One external RF bypass capacitor (10,000 pF) (C3) is required.
6
Vdd IF
Bias voltage for IF amplifier. One external RF bypass capacitor (10,000 pF) (C2) is required.
8
IF Bias
DC bias setting for IF amplifier. (C1, R1)
10
IF Port
Output of IF and bias port for amplifier. A pull up inductor (L1), output matching network (C5, C6, C7, L2, L4), and 10,000 pF bypass capacitor (C4) are required.
11, 12, 13
GND
Pin must connect to RF ground. Backside of package has exposed metal ground slug that must also be connected to RF/DC ground.
15
RF Port
This pin is DC coupled and matched to 50 Ohms from 0.8 - 1.0 GHz.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
MICROWAVE CORPORATION
v00.0703
HMC377QS16G
CELLULAR HIGH IP3 RFIC DOWNCONVERTER, 0.8 - 1.0 GHz
Evaluation PCB
12
MIXERS - SMT
List of Material
Item J1, J2, J3 J4, J5, J6, J7 C1 C2, C3, C4, C8 C5 C6, C7 ** C9 L1 L2, L4 L3 R1 R2 U1 PCB* Description PC Mount SMA RF Connector DC Pins 1000 pF Chip Capacitor, 0603 Pkg. 0.01F Chip Capacitor, 0603 Pkg. 82 pF Chip Capacitor, 0402 Pkg. 33 pF Chip Capacitor, 0603 Pkg. 100 pF Chip Capacitor, 0602 Pkg. 150 nH Chip Inductor, 0805 Pkg. 68 nH Chip Inductor, 0805 Pkg. 56 nH Inductor, 0805 Pkg. 3.3 Ohm Resistor, 0603 22 Ohm Resistor, 0603 Pkg. HMC377QS16G Mixer 107358 Evaluation Board
The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request.
* Circuit Board Material: Rogers 4350 ** For 70 MHz IF. See Application Circuit for alternate IF frequency tuning.
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
MICROWAVE CORPORATION
v00.0703
HMC377QS16G
CELLULAR HIGH IP3 RFIC DOWNCONVERTER, 0.8 - 1.0 GHz
Application Circuit
12
MIXERS - SMT
12 - 187
Note: Pins 3, 5 and 6 may be connected to a common Vdd Supply.
Selection of C6 & C7 For Various Tuned IF Frequencies
IF 70 MHz 120 MHz 170 MHz 247 MHz C6, C7 33 pF 56 pF 27 pF 12 pF
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com

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